First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Resu...

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Bibliographic Details
Main Authors: Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Samuel James Bader, James C. M. Hwang, Huili Grace Xing, Debdeep Jena
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
AlN
output power
mm-wave
load-pull
Online Access:https://ieeexplore.ieee.org/document/9277525/

Internet

https://ieeexplore.ieee.org/document/9277525/

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