Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment. These devices demonstrate high performance with transconductance of 2.4 mS/μm, high on-current, and off-current below 1 nA/&#x0...

Full description

Bibliographic Details
Main Authors: Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Vertical
nanowire
InAs
InGaAs
MOSFET
heterostructure
Online Access:https://ieeexplore.ieee.org/document/8515017/

Internet

https://ieeexplore.ieee.org/document/8515017/

Similar Items