Schottky Barrier Height and Image Force Lowering in Monolayer MoS<sub>2</sub> Field Effect Transistors

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (T...

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Bibliographic Details
Main Authors: Yonatan Vaknin, Ronen Dagan, Yossi Rosenwaks
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Nanomaterials
Subjects:
TMD
FET
Online Access:https://www.mdpi.com/2079-4991/10/12/2346