Fabrication of 5-20 nm thick β-W films
A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spec...
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AIP Publishing LLC
2014-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4903165 |
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doaj-b830bdbc77664abdb81e4aabd1af54212020-11-25T01:44:55ZengAIP Publishing LLCAIP Advances2158-32262014-11-01411117139117139-710.1063/1.4903165041411ADVFabrication of 5-20 nm thick β-W filmsAvyaya J. Narasimham0Manasa Medikonda1Akitomo Matsubayashi2Prasanna Khare3Hyuncher Chong4Richard J. Matyi5Alain Diebold6Vincent P. LaBella7College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USA A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device. http://dx.doi.org/10.1063/1.4903165 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Avyaya J. Narasimham Manasa Medikonda Akitomo Matsubayashi Prasanna Khare Hyuncher Chong Richard J. Matyi Alain Diebold Vincent P. LaBella |
| spellingShingle |
Avyaya J. Narasimham Manasa Medikonda Akitomo Matsubayashi Prasanna Khare Hyuncher Chong Richard J. Matyi Alain Diebold Vincent P. LaBella Fabrication of 5-20 nm thick β-W films AIP Advances |
| author_facet |
Avyaya J. Narasimham Manasa Medikonda Akitomo Matsubayashi Prasanna Khare Hyuncher Chong Richard J. Matyi Alain Diebold Vincent P. LaBella |
| author_sort |
Avyaya J. Narasimham |
| title |
Fabrication of 5-20 nm thick β-W films |
| title_short |
Fabrication of 5-20 nm thick β-W films |
| title_full |
Fabrication of 5-20 nm thick β-W films |
| title_fullStr |
Fabrication of 5-20 nm thick β-W films |
| title_full_unstemmed |
Fabrication of 5-20 nm thick β-W films |
| title_sort |
fabrication of 5-20 nm thick β-w films |
| publisher |
AIP Publishing LLC |
| series |
AIP Advances |
| issn |
2158-3226 |
| publishDate |
2014-11-01 |
| description |
A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.
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| url |
http://dx.doi.org/10.1063/1.4903165 |
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