InP/InGaAs Photodetector on SOI Photonic Circuitry

InP/InGaAs Photodetector on SOI Photonic Circuitry

We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 &#x03BC;m<sup>2</sup>, which is the sm...

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Bibliographic Details
Main Authors: P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Nötzel, M. K. Smit
Format: Article
Language:English
Published: IEEE 2010-01-01
Series:IEEE Photonics Journal
Subjects:
Optical interconnects
photodetector
Online Access:https://ieeexplore.ieee.org/document/5437284/

Internet

https://ieeexplore.ieee.org/document/5437284/

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