A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge wa...

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Bibliographic Details
Main Authors: Mohd Haris Md Khir, Hongwei Qu, Peng Qu
Format: Article
Language:English
Published: MDPI AG 2011-08-01
Series:Sensors
Subjects:
CMOS-MEMS
piezoresistive
polysilicon
deep reactive ion etching (DRIE)
Online Access:http://www.mdpi.com/1424-8220/11/8/7892/

Internet

http://www.mdpi.com/1424-8220/11/8/7892/

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