On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET

On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET

N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep subthreshold slope under certain conditions. Possible origins of I<sub>D</sub>-V<sub>G</sub> hysteresis, the hysteresis versus subthreshold slope tradeoff, dependence on the bias voltage and...

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Bibliographic Details
Main Authors: Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Steep-slope FET
ferroelectric FET
trap characterization
Online Access:https://ieeexplore.ieee.org/document/8667000/

Internet

https://ieeexplore.ieee.org/document/8667000/

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