InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation
This paper presents an experimental study of InGaAs/AlAs resonant tunneling diodes designed to improve the diode characteristics using five different device structures. A promising high peak to valley current ratio of 5.2 was obtained for a very low current density device. As expected, the measured...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8279410/ |