Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons

Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors ma...

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Bibliographic Details
Main Authors: Fabio Principato, Saverio Altieri, Leonardo Abbene, Francesco Pintacuda
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Sensors
Subjects:
failure in time
power device reliability
silicon carbide
neutron beams
single-event burnout
Online Access:https://www.mdpi.com/1424-8220/20/11/3021

Internet

https://www.mdpi.com/1424-8220/20/11/3021

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