A Comparative Analysis between Standard and mm-Wave Optimized BEOL in a Nanoscale CMOS Technology

A Comparative Analysis between Standard and mm-Wave Optimized BEOL in a Nanoscale CMOS Technology

This paper presents an extensive comparison of two 28-nm CMOS technologies, i.e., standard and mm-wave-optimized (i.e., thick metals and intermetal oxides) back-end-of-line (BEOL). The proposed comparison is carried out at both component and circuit level by means of a quantitative analysis of the a...

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Bibliographic Details
Main Authors: Egidio Ragonese, Claudio Nocera, Andrea Cavarra, Giuseppe Papotto, Simone Spataro, Giuseppe Palmisano
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
back-end-of-line (BEOL)
CMOS technology
conversion gain
down-converter
electromagnetic simulations
integrated transformers
Online Access:https://www.mdpi.com/2079-9292/9/12/2124

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https://www.mdpi.com/2079-9292/9/12/2124

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