900 V GaN-based sine-wave inverters for three-phase industrial applications

900 V GaN-based sine-wave inverters for three-phase industrial applications

GaN devices are gradually getting attention within the industry along with SiC as a potential wide bandgap device. At present, there are almost no high-voltage GaN devices with voltage >650 V, which makes an inverter design difficult for a three-phase input. To address this challenge to some exte...

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Bibliographic Details
Main Authors: Nilanjan Mukherjee, Johannes Fuerst, Fabian Diepold, Fernando Aguilar Vega
Format: Article
Language:English
Published: Wiley 2019-04-01
Series:The Journal of Engineering
Subjects:
III-V semiconductors
switching convertors
PWM invertors
gallium compounds
wide band gap semiconductors
silicon compounds
three-phase industrial applications
potential wide bandgap device
inverter design
three-phase input
filter size
sine-wave output
traditional pulse-width modulator output
three-phase applications
sine-wave inverters
high-voltage devices
DC-link-based three-phase inverter-fed high power density system
high switching frequency device
power losses
voltage 900.0 V
voltage 700.0 V
frequency 128.0 kHz
SiC
GaN
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8032

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https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8032

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