Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD simulation. Unlike certain previous studies, in which...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8430529/ |