Simulation Study on the Design of Sub-<inline-formula> <tex-math notation="LaTeX">$kT/q$ </tex-math></inline-formula> Non-Hysteretic Negative Capacitance FET Using Capacitance Matching

In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD simulation. Unlike certain previous studies, in which...

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Bibliographic Details
Main Authors: Pavlo Bidenko, Subin Lee, Jae-Hoon Han, Jin Dong Song, Sang-Hyeon Kim
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8430529/