A mHEMT Power-Reconfigurable Distributed Amplifier Using a Gain Cell Switching Technique
A power-reconfigurable distributed amplifier (DA) is implemented using a 130 nm metamorphic high-electron mobility transistor (mHEMT) process. Using a mHEMT process with excellent high-frequency characteristics, output power and efficiency at high frequencies are improved compared with the existing...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9509548/ |