Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed. Gate-normal band-to-band tunneling (BTBT) has high...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5088890 |