A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD
The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Association of Metallurgical Engineers of Serbia
2015-03-01
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| Series: | Metallurgical & Materials Engineering |
| Subjects: | |
| Online Access: | http://metall-mater-eng.com/index.php/home/article/view/128 |