A New Vertical JFET Power Device for Harsh Radiation Environments

A New Vertical JFET Power Device for Harsh Radiation Environments

An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the ava...

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Bibliographic Details
Main Authors: Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, Xavier Jordà, Xavier Perpiñà, David Quirion, Lucia Ré, Miguel Ullán, Miquel Vellvehí
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Energies
Subjects:
rad-hard power devices
JFET
vertical power devices
power distribution
electronics for High Energy Physics
Online Access:http://www.mdpi.com/1996-1073/10/2/256

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http://www.mdpi.com/1996-1073/10/2/256

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