Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield n...

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Main Authors: J. Vukajlovic-Plestina, W. Kim, L. Ghisalberti, G. Varnavides, G. Tütüncuoglu, H. Potts, M. Friedl, L. Güniat, W. C. Carter, V. G. Dubrovskii, A. Fontcuberta i Morral
Format: Article
Language:English
Published: Nature Publishing Group 2019-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-08807-9
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spelling doaj-b3b57ddb5170437f885fca2094727d4a2021-05-11T11:52:38ZengNature Publishing GroupNature Communications2041-17232019-02-011011710.1038/s41467-019-08807-9Fundamental aspects to localize self-catalyzed III-V nanowires on siliconJ. Vukajlovic-Plestina0W. Kim1L. Ghisalberti2G. Varnavides3G. Tütüncuoglu4H. Potts5M. Friedl6L. Güniat7W. C. Carter8V. G. Dubrovskii9A. Fontcuberta i Morral10Laboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLDepartments of Materials Science and Engineering, MITLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLITMO UniversityLaboratory of Semiconductor Materials, Institute of Materials, EPFLThe ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield nanowire arrays.https://doi.org/10.1038/s41467-019-08807-9
collection DOAJ
language English
format Article
sources DOAJ
author J. Vukajlovic-Plestina
W. Kim
L. Ghisalberti
G. Varnavides
G. Tütüncuoglu
H. Potts
M. Friedl
L. Güniat
W. C. Carter
V. G. Dubrovskii
A. Fontcuberta i Morral
spellingShingle J. Vukajlovic-Plestina
W. Kim
L. Ghisalberti
G. Varnavides
G. Tütüncuoglu
H. Potts
M. Friedl
L. Güniat
W. C. Carter
V. G. Dubrovskii
A. Fontcuberta i Morral
Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
Nature Communications
author_facet J. Vukajlovic-Plestina
W. Kim
L. Ghisalberti
G. Varnavides
G. Tütüncuoglu
H. Potts
M. Friedl
L. Güniat
W. C. Carter
V. G. Dubrovskii
A. Fontcuberta i Morral
author_sort J. Vukajlovic-Plestina
title Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_short Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_full Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_fullStr Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_full_unstemmed Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_sort fundamental aspects to localize self-catalyzed iii-v nanowires on silicon
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-02-01
description The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield nanowire arrays.
url https://doi.org/10.1038/s41467-019-08807-9
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