Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield n...

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Bibliographic Details
Main Authors: J. Vukajlovic-Plestina, W. Kim, L. Ghisalberti, G. Varnavides, G. Tütüncuoglu, H. Potts, M. Friedl, L. Güniat, W. C. Carter, V. G. Dubrovskii, A. Fontcuberta i Morral
Format: Article
Language:English
Published: Nature Publishing Group 2019-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-08807-9

Internet

https://doi.org/10.1038/s41467-019-08807-9

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