Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Abstract Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS2 Schottky diodes under ambient as well as gas exposure conditions. MoS2 f...

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Bibliographic Details
Main Authors: Sun Jun Kim, Jae Young Park, SangHyuk Yoo, Palanivel Umadevi, Hyunpyo Lee, Jinsoo Cho, Keonwook Kang, Seong Chan Jun
Format: Article
Language:English
Published: SpringerOpen 2018-09-01
Series:Nanoscale Research Letters
Subjects:
MoS2
Field-effect transistor
Schottky diode
Gas sensor
Contact effect
Schottky barrier
Online Access:http://link.springer.com/article/10.1186/s11671-018-2652-9

Internet

http://link.springer.com/article/10.1186/s11671-018-2652-9

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