A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles

This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the cor...

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Bibliographic Details
Main Authors: Chuyang Hong, Jun Zhou, Qi Cheng, Kunkun Zhu, James B. Kuo, Yijian Chen
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7927695/