A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles
This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the cor...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7927695/ |