Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with part...

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Bibliographic Details
Main Authors: Silvia Vangelista, Rossella Piagge, Satu Ek, Alessio Lamperti
Format: Article
Language:English
Published: Beilstein-Institut 2018-03-01
Series:Beilstein Journal of Nanotechnology
Subjects:
atomic layer deposition
cerium(IV) oxide (CeO2) microstructure
in situ annealing
transmission electron microscopy
X-ray diffraction
Online Access:https://doi.org/10.3762/bjnano.9.83

Internet

https://doi.org/10.3762/bjnano.9.83

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