Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon
Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical re...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2019-03-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/46315/download/pdf/ |