Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic...

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Bibliographic Details
Main Authors:	R. E. Beisenov, R. Ebrahim, Z. A. Mansurov, S. Th. Tokmoldin, B. Z. Mansurov, A. Ignatiev
Format:	Article
Language:	English
Published:	al-Farabi Kazakh National University 2013-01-01
Series:	Eurasian Chemico-Technological Journal
Online Access:	http://ect-journal.kz/index.php/ectj/article/view/329

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