Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
al-Farabi Kazakh National University
2013-01-01
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| Series: | Eurasian Chemico-Technological Journal |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/329 |