Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-09-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523921000489 |