Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron t...

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Bibliographic Details
Main Authors: Muhammad Shaffatul Islam, Md. Soyaeb Hasan, Md. Rafiqul Islam, Ahmed Iskanderani, Ibrahim M. Mehedi, Md. Tanvir Hasan
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
GaAs
GaSb
double gate
junctionless MOSFETs
nano-scaled device
short-channel effects (SCEs)
Online Access:https://ieeexplore.ieee.org/document/9517274/

Internet

https://ieeexplore.ieee.org/document/9517274/

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