Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

Full description

Bibliographic Details
Main Authors: Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu, Ping Chen
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
anomalous temperature-dependent photoluminescence
non-equilibrium carriers dynamics
InGaN/GaN MQWs
hydrogen treatment
Online Access:https://www.mdpi.com/2079-4991/11/4/1023

Internet

https://www.mdpi.com/2079-4991/11/4/1023

Similar Items