Deep Level Transient Spectroscopy in Quantum Dot Characterization

Deep Level Transient Spectroscopy in Quantum Dot Characterization

<p>Abstract</p><p>Deep level transient spectroscopy (DLTS) for investigating electronic properties of self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From suc...

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Bibliographic Details
Main Authors: Kaniewska M, Engstr&#246;m O
Format: Article
Language:English
Published: SpringerOpen 2008-01-01
Series:Nanoscale Research Letters
Subjects:
Electron states in low-dimensional structures
Quantum dots
III&#8211;V semiconductors
Electrical properties
Deep level transient spectroscopy
Online Access:http://dx.doi.org/10.1007/s11671-008-9133-5

Internet

http://dx.doi.org/10.1007/s11671-008-9133-5

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