The Impact of High Dielectric Permittivity on SOI Double-Gate Mosfet Using Nextnano Simulator
Performance of high-k Double-Gate SOI MOSFETs is studied and compared to silicon dioxide based devices. This is achieved by computing variation of threshold voltage, swing subthreshold, leakage current and drain-induced barrier lowering (DIBL) with respect to different gate bias (VG) when gate lengt...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2012-03-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/march_2012/SENSORDEVICES/P_SI_194.pdf |