Growth of AlGaN Film on Si (111) Substrate
At present, the applications of AlxGa1−xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, light emitting diodes (LEDs) and HEMTs. In this paper, Al0.25Ga0.75N and Al0.32Ga0.68N films have been grown on 2 in Si (iii) substrates by MOCVD. The low-temperature (6 K) photolu...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20166106016 |