Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide suc...

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Bibliographic Details
Main Authors: Stefano Ponzoni, Sonia Freddi, Marta Agati, Vincent Le Borgne, Simona Boninelli, Richard Dolbec, My Ali El Khakani, Stefania Pagliara, Paola Castrucci
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/13/19/4267