Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors

• Main Authors: Takuma Aihara, Masashi Fukuhara, Ayumi Takeda, Byounghyun Lim, Masato Futagawa, Yuya Ishii, Kazuaki Sawada, Mitsuo Fukuda
• Format: Article
• Language: English
• Published: IEEE 2013-01-01
• Series: IEEE Photonics Journal
• Subjects: Surface plasmon polariton; Schottky barrier; diffraction grating; nano-slit; metal-oxide-semiconductor field-effect transistor
• Online Access: https://ieeexplore.ieee.org/document/6557472/
• ISSN: 1943-0655

The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by ~14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.