Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors

Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors

The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm....

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Bibliographic Details
Main Authors: Takuma Aihara, Masashi Fukuhara, Ayumi Takeda, Byounghyun Lim, Masato Futagawa, Yuya Ishii, Kazuaki Sawada, Mitsuo Fukuda
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
Surface plasmon polariton
Schottky barrier
diffraction grating
nano-slit
metal-oxide-semiconductor field-effect transistor
Online Access:https://ieeexplore.ieee.org/document/6557472/

Internet

https://ieeexplore.ieee.org/document/6557472/

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