A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode
A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with the conventional SGT MOSFET (C-SGT MOS) and conventional SGT MOSFET with built-in channel diode (CBCD-SGT MOS),...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9542929/ |