Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST) Thin Film Doped with Ferric Oxide on p-type Si (100) Substrate using Chemical Solution Deposition Method

Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST) Thin Film Doped with Ferric Oxide on p-type Si (100) Substrate using Chemical Solution Deposition Method

In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST) and BST doped by Ferric Oxide Fe2O3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon (100) substrate using the chemical solution deposition (CSD) method with spin coating technique at rotation speed of 3000 rpm, for 30 sec...

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Bibliographic Details
Main Authors: Irzaman, H. Syafutra, H. Darmasetiawan, H. Hardhienata, R. Erviansyah, F. Huriawati, Akhiruddin, M. Hikam, P. Arifin
Format: Article
Language:English
Published: Center for Development of Nuclear Informatics, National Nuclear Energy Agency (BATAN) 2011-12-01
Series:Atom Indonesia
Subjects:
BSFT thin film
Current-voltage characteristics
Ferric oxide doping
Photodiode
Spin coating
XRD characteristics
Online Access:http://aij.batan.go.id/index.php/aij/article/view/81

Internet

http://aij.batan.go.id/index.php/aij/article/view/81

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