Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

This paper investigates novel Al<sub>2</sub>O<sub>3</sub>-dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vac...

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Main Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InAlN/AlN/GaN
MOS-HFET
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
backside metal-trench
Online Access:https://ieeexplore.ieee.org/document/8094232/
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spelling doaj-ab7923b0c87444eabca0c5b05b9c28fe2021-03-29T18:45:42ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-016687310.1109/JEDS.2017.27691158094232Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench StructureChing-Sung Lee0https://orcid.org/0000-0002-3044-5073Wei-Chou Hsu1Han-Yin Liu2https://orcid.org/0000-0003-1150-7192Yu-Chang Chen3Department of Electronic Engineering, Feng Chia University, Taichung, TaiwanDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung, TaiwanThis paper investigates novel Al<sub>2</sub>O<sub>3</sub>-dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-&#x03BC;m deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (I<sub>DS,max</sub>) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (I<sub>on</sub>/I<sub>off</sub>) of 8.9 x 10<sup>8</sup> (7.4 x 10<sup>4</sup>), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (P<sub>out</sub>) of 27.9 (21.5) dBm, power gain (G<sub>a</sub>) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.https://ieeexplore.ieee.org/document/8094232/InAlN/AlN/GaNMOS-HFETAl₂O₃non-vacuum ultrasonic spray pyrolysis depositionbackside metal-trench
collection DOAJ
language English
format Article
sources DOAJ
author Ching-Sung Lee
Wei-Chou Hsu
Han-Yin Liu
Yu-Chang Chen
spellingShingle Ching-Sung Lee
Wei-Chou Hsu
Han-Yin Liu
Yu-Chang Chen
Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
IEEE Journal of the Electron Devices Society
InAlN/AlN/GaN
MOS-HFET
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
backside metal-trench
author_facet Ching-Sung Lee
Wei-Chou Hsu
Han-Yin Liu
Yu-Chang Chen
author_sort Ching-Sung Lee
title Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
title_short Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
title_full Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
title_fullStr Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
title_full_unstemmed Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure
title_sort al<sub>2</sub>o<sub>3</sub>-dielectric in<sub>0.18</sub>al<sub>0.82</sub>n/aln/gan/si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2018-01-01
description This paper investigates novel Al<sub>2</sub>O<sub>3</sub>-dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-&#x03BC;m deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (I<sub>DS,max</sub>) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (I<sub>on</sub>/I<sub>off</sub>) of 8.9 x 10<sup>8</sup> (7.4 x 10<sup>4</sup>), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (P<sub>out</sub>) of 27.9 (21.5) dBm, power gain (G<sub>a</sub>) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.
topic InAlN/AlN/GaN
MOS-HFET
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
backside metal-trench
url https://ieeexplore.ieee.org/document/8094232/
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AT weichouhsu alsub2subosub3subdielectricinsub018subalsub082subnalngansimetaloxidesemiconductorheterostructurefieldeffecttransistorswithbacksidesubstratemetaltrenchstructure
AT hanyinliu alsub2subosub3subdielectricinsub018subalsub082subnalngansimetaloxidesemiconductorheterostructurefieldeffecttransistorswithbacksidesubstratemetaltrenchstructure
AT yuchangchen alsub2subosub3subdielectricinsub018subalsub082subnalngansimetaloxidesemiconductorheterostructurefieldeffecttransistorswithbacksidesubstratemetaltrenchstructure
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