Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

This paper investigates novel Al<sub>2</sub>O<sub>3</sub>-dielectric In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vac...

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Bibliographic Details
Main Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InAlN/AlN/GaN
MOS-HFET
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
backside metal-trench
Online Access:https://ieeexplore.ieee.org/document/8094232/

Internet

https://ieeexplore.ieee.org/document/8094232/

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