Enhancement of porous silicon photoluminescence using vanadium pentoxide (V2O5) treatment
A new method has been developed to improve the photoluminescence intensity of porous Silicon PS. In this treatment we used vanadium, for the first time, to passivate porous silicon. Thermal evaporation of (V2O5) onto PS layer, followed by a thermal treatment at 100°C, 200°C, 300°C and 400°C for 15 m...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2012-06-01
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| Series: | EPJ Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/epjconf/20122900013 |