Investigation of the process of reactive ion-beam sputtering of gallium arsenide using optical emission spectroscopy
The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide using optical emission analysis of plasma in the target region to determine the optimal conditions for the formation of intrinsic GaAs oxides. The ion source was a plasmatron based on an anode layer acc...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-02-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/2986 |