On the Sensitivity of Electron-Injection Detectors at Low Light Level

On the Sensitivity of Electron-Injection Detectors at Low Light Level

We present the signal-to-noise performance of a short-wave infrared detector, which offers an internal avalanche-free gain. The detector is based on a similar mechanism as the heterojunction phototransistor and takes advantage of a type-II band alignment. Current devices demonstrate a noise-equivale...

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Bibliographic Details
Main Authors: Vala Fathipour, Iman Hassani Nia, Alireza Bonakdar, Hooman Mohseni
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
Optoelectronic materials
Imaging
Imaging systems
Applications
Infrared
photodetector
Online Access:https://ieeexplore.ieee.org/document/7460223/

Internet

https://ieeexplore.ieee.org/document/7460223/

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