Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes

Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes

In this work, the method of electrophysical diagnostics of ohmic contacts to n+-n-n+ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n+-n-n+-Si contacts and the current-flow mechanism within the temperature...

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Bibliographic Details
Main Author: P.M. Romanets
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2019-03-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
specific resistance
ohmic contact
impact ionization avalanche transit-time diode
thermal-field emission
Online Access:http://journal-spqeo.org.ua/n1_2019/P034-038abstr.html

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