Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
In this work, the method of electrophysical diagnostics of ohmic contacts to n+-n-n+ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au–Ti–Pd–n+-n-n+-Si contacts and the current-flow mechanism within the temperature...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-03-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n1_2019/P034-038abstr.html |