Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and c...

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Main Authors: V. Mohammadi, S. Nihtianov
Format: Article
Language:English
Published: AIP Publishing LLC 2016-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4941702
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spelling doaj-a9dec4a99a5541c69416eaf38eb29de42020-11-24T23:39:16ZengAIP Publishing LLCAIP Advances2158-32262016-02-0162025103025103-810.1063/1.4941702010602ADVLateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layersV. Mohammadi0S. Nihtianov1Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, The NetherlandsDepartment of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, The NetherlandsThe lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.http://dx.doi.org/10.1063/1.4941702
collection DOAJ
language English
format Article
sources DOAJ
author V. Mohammadi
S. Nihtianov
spellingShingle V. Mohammadi
S. Nihtianov
Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
AIP Advances
author_facet V. Mohammadi
S. Nihtianov
author_sort V. Mohammadi
title Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
title_short Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
title_full Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
title_fullStr Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
title_full_unstemmed Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
title_sort lateral gas phase diffusion length of boron atoms over si/b surfaces during cvd of pure boron layers
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-02-01
description The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.
url http://dx.doi.org/10.1063/1.4941702
work_keys_str_mv AT vmohammadi lateralgasphasediffusionlengthofboronatomsoversibsurfacesduringcvdofpureboronlayers
AT snihtianov lateralgasphasediffusionlengthofboronatomsoversibsurfacesduringcvdofpureboronlayers
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