Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers
The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and c...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4941702 |