Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications
The stress induced by the capping electrode is critical to stabilizing the ferroelectric phase in Si-doped HfO<sub>2</sub> which is being actively explored for embedded non-volatile memory applications. While TiN is commonly used as the electrode of choice owing to its thermodynamic stab...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8672462/ |