Measuring the ultrashallow profiles of P implants into Si
We have initiated a study to extract concentration profiles of ultra shallow phosphorous implants in silicon complementing published work on ultra shallow boron implant profiles. There is an ever-increasing interest in the production of p-n junctions in silicon to create the new generations of ult...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Isfahan University of Technology
2004-06-01
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| Series: | Iranian Journal of Physics Research |
| Subjects: | |
| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-117&slc_lang=en&sid=1 |