Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-temporal gaussian distribution. The parasitic...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/18731 |