ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
The SiO<sub>2</sub> generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidiz...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-02-01
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Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/10/2/134 |