Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO<sub><i>x</i></sub>-Based Memristive Devices

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO<sub><i>x</i></sub>-Based Memristive Devices

Oxygen ions&#8217; migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT). However, the lack of experimental evide...

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Bibliographic Details
Main Authors: Dong Wang, Shaoan Yan, Qilai Chen, Qiming He, Yongguang Xiao, Minghua Tang, Xuejun Zheng
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Nanomaterials
Subjects:
resistive switching
HfO<sub><i>x</i></sub>
oxygen plasma treatment
oxygen ions migration
oxygen vacancy
Online Access:https://www.mdpi.com/2079-4991/9/10/1355

Internet

https://www.mdpi.com/2079-4991/9/10/1355

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