All-Solution-Processed InGaO3(ZnO)m Thin Films with Layered Structure

We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the...

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Bibliographic Details
Main Authors: Sung Woon Cho, Jun Hyeon Kim, Sangwoo Shin, Hyung Hee Cho, Hyung Koun Cho
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2013/909786